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BC847BVN

The BC847BVN is a dual NPN/PNP bipolar transistor array from NXP Semiconductors. It features a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and transition frequencies up to 300MHz.

✓ Total Stock: 25,761 pcs

$ Price Range: $0.99

BC847BVN Available from 3 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	20,554 pcs On Request	20554 pcs	On Request	1	On Request	On Request	1516+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,100 pcs On Request	5100 pcs	On Request	1	On Request	On Request	2014	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	107 pcs On Request	107 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BC847BVN Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors
Mounting Type	Surface Mount
Operating Temperature	-65°C ~ 150°C
Transistor Type	NPN, PNP

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BC847BVN Description

Short technical summary and product information.

The BC847BVN is a dual NPN/PNP bipolar transistor array from NXP Semiconductors, designed for general-purpose switching and amplification applications. This device integrates one NPN and one PNP transistor in a single SOT-563 surface-mount package, offering space savings and matched performance.

Key electrical specifications include a maximum collector-emitter breakdown voltage of 45V, a maximum collector current of 100mA, and a maximum power dissipation of 150mW. The NPN transistor offers a transition frequency of 300MHz, while the PNP transistor offers 200MHz. DC current gain (hFE) is a minimum of 200 for the NPN and 220 for the PNP at 2mA, 5V. Maximum Vce saturation is 600mV for the NPN and 650mV for the PNP at 5mA, 100mA. The device operates over a junction temperature range of -65°C to 150°C.

The BC847BVN is supplied in Tape & Reel packaging for automated assembly. It is suitable for a wide range of low-power circuits where both NPN and PNP transistors are required.

BC847BVN Quick Information

Product Type: Bipolar Transistor Array

Canonical Name: BC847BVN NPN/PNP Dual Bipolar Transistor Array

Subcategory: BJT Arrays

BC847BVN Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BC847BVN Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BVN Features

Dual NPN and PNP transistors in one package.
45V maximum collector-emitter breakdown voltage.
100mA maximum collector current rating.
300MHz NPN and 200MHz PNP transition frequency.
Surface-mount SOT-563 package for compact designs.

BC847BVN Applications

General purpose low-power switching circuits.
Signal amplification in portable electronics.
Matched transistor pair for differential amplifiers.
Battery-powered device load switching.

BC847BVN FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the BC847BVN?

The maximum collector-emitter breakdown voltage is 45V.

What is the maximum collector current for the BC847BVN?

The maximum collector current is 100mA.

What is the operating temperature range of the BC847BVN?

The operating junction temperature range is -65°C to 150°C.

What package is the BC847BVN available in?

The BC847BVN is available in a SOT-563 surface-mount package.

What is the power dissipation of the BC847BVN?

The maximum power dissipation is 150mW.

What is the DC current gain (hFE) of the BC847BVN?

The minimum hFE is 200 for the NPN transistor and 220 for the PNP transistor at 2mA, 5V.

What is the transition frequency of the BC847BVN?

The transition frequency is 300MHz for the NPN transistor and 200MHz for the PNP transistor.