BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,470 pcs
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1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The BC847BT/R from NXP Semiconductors is a single NPN bipolar junction transistor (BJT) designed for switching applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 45V and a maximum continuous collector current (Ic) of 0.1A. The transistor offers a minimum DC current gain (hFE) of 200 and a nominal transition frequency (fT) of 100 MHz. The maximum saturation voltage (VCEsat) is 0.6V, and it has a maximum power dissipation of 0.25W.
This component operates within a temperature range of -65°C to 150°C. It is designed for surface mounting and is compatible with standard reflow soldering processes, with a peak reflow temperature of 260°C for up to 30 seconds.
The BC847BT/R is suitable for general-purpose switching and amplification tasks in various electronic circuits.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC847BT/R operates from -65°C to 150°C.
The BC847BT/R comes in a surface-mount SOT-23 package.
The maximum collector-emitter voltage is 45V.
The minimum DC current gain is 200.
The transition frequency is 100 MHz.
The maximum collector current is 0.1 A.
The maximum power dissipation is 0.25 W.