| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC847BPDXV6T1 from On Semiconductor is a dual NPN/PNP general purpose bipolar junction transistor array. It is designed for general purpose amplifier applications and is housed in the compact SOT-563 surface mount package, suitable for low power designs. The device is Pb-Free and RoHS compliant.
Electrical characteristics include a maximum collector-emitter voltage of 45 V for the NPN transistor and -45 V for the PNP section. Continuous collector current is rated at 100 mA for both. DC current gain (hFE) is a minimum of 200 at 2 mA collector current and 5 V VCE. The transition frequency is typically 100 MHz. Maximum power dissipation is 500 mW when both junctions are heated, or 357 mW for a single junction, with a thermal resistance of 250°C/W and 350°C/W respectively.
The device is available in SOT-563 and SOT-666 packages (supplier device package is SOT-563). It operates over a junction temperature range of -55°C to 150°C. This product is suitable for a variety of general purpose amplification and switching applications in low power surface mount circuits.
| Qty | Low | High |
|---|---|---|
| 8,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NPN transistor has a maximum VCEO of 45V; the PNP has -45V.
Available in SOT-563 and SOT-666 packages. The supplier device package is SOT-563.
-55°C to 150°C junction temperature.
Yes, the device is RoHS3 Compliant and Pb-Free as per the datasheet.
Minimum hFE of 200 at Ic=2mA, Vce=5V.
500 mW total when both junctions are heated, 357 mW for one junction.
Typically 100 MHz.