BC847BPDW1T2G BC847BPDW1T2G is a dual NPN/PNP general purpose transistor from On Semiconductor. It features 45V collector-emitter voltage, 100mA continuous collector current, and is housed in a surface-mount SOT-363 package.
Mfr Part #:

BC847BPDW1T2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC847BPDW1T2G is a dual NPN/PNP general purpose transistor from On Semiconductor. It features 45V collector-emitter voltage, 100mA continuous collector current, and is housed in a surface-mount SOT-363 package.
✓ Total Stock: 32,633 pcs
$ Price Range: $0.04 - $0.21

BC847BPDW1T2G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
32,400 pcs
32400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
233 pcs
233 pcs On Request 1 On Request On Request On Request On Request On Request

BC847BPDW1T2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC847BPDW1T2G Description

Short technical summary and product information.

The BC847BPDW1T2G is a dual general purpose transistor integrating complementary NPN and PNP transistors in a single SOT-363 surface mount package. Designed for low power amplifier and switching applications, each transistor offers a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current rating of 100mA, with peak current capability up to 200mA.

 

DC current gain (hFE) is guaranteed at a minimum of 200 when tested at Ic=2mA and Vce=5V. The typical transition frequency is 100 MHz, making it suitable for general purpose amplification up to moderate frequencies. Maximum power dissipation per device is 380mW on an FR-5 board, with a junction-to-ambient thermal resistance of 328°C/W.

 

The device is housed in the industry-standard SOT-363 (SC-88, 6-TSSOP) package, which is optimized for low profile surface mount assembly. It is supplied in tape and reel packaging with 3000 units per reel. The BC847BPDW1T2G is RoHS3 compliant, Pb-free, and Halogen Free/BFR Free as verified by the datasheet.

BC847BPDW1T2G Quick Information

Product Type: Bipolar Transistor Array
Series: BC847BPDW1
Canonical Name: BC847BPDW1T2G Dual NPN/PNP General Purpose Transistor
Subcategory: Complementary NPN/PNP Dual Transistor

BC847BPDW1T2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC847BPDW1T2G Estimated Pricing

Qty Low High
1+ $0.21 $0.21
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BPDW1T2G Features

  • Complementary NPN/PNP dual transistor.
  • 45V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-363 package.
  • RoHS compliant and Pb-free.

BC847BPDW1T2G Applications

  • General purpose amplifier circuits.
  • Signal switching applications.
  • Low power surface mount designs.
  • Complementary pair driver stages.

BC847BPDW1T2G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

Maximum VCEO is 45V for both NPN and PNP transistors.

What package is the BC847BPDW1T2G available in?

It is available in a surface mount SOT-363 (SC-88, 6-TSSOP) package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the BC847BPDW1T2G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-free, and Halogen Free/BFR Free as per the datasheet.

Home
Account

Categories