BC847BPDW1T1G BC847BPDW1T1G is a dual general purpose NPN/PNP complementary transistor from ON Semiconductor, housed in a surface-mount SOT-363 package. Key specs: 45V VCEO, 100mA continuous collector current, 200 min hFE.
Mfr Part #:

BC847BPDW1T1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC847BPDW1T1G is a dual general purpose NPN/PNP complementary transistor from ON Semiconductor, housed in a surface-mount SOT-363 package. Key specs: 45V VCEO, 100mA continuous collector current, 200 min hFE.
✓ Total Stock: 1,667,205 pcs
$ Price Range: $0.05 - $0.27

BC847BPDW1T1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised

BC847BPDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC847BPDW1T1G Description

Short technical summary and product information.

The BC847BPDW1T1G is a dual general purpose transistor combining an NPN and a PNP transistor in a single surface-mount package. Designed for low power amplifier applications, it offers a complementary pair with matched electrical characteristics. The device is rated for a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA (200 mA peak).

 

With a minimum DC current gain of 200 at Ic=2 mA, Vce=5 V, and a typical transition frequency of 100 MHz, these transistors are well-suited for audio preamplifiers, driver stages, and signal switching circuits. The saturation voltage is typically 600 mV at Ib=5 mA, Ic=100 mA.

 

The BC847BPDW1T1G is housed in a SOT-363 (SC-88/SC70-6) package, supporting surface-mount assembly for compact designs. It is rated for operation from -55°C to 150°C junction temperature, with a maximum power dissipation of 380 mW per device on FR-5 board. The device is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant.

BC847BPDW1T1G Quick Information

Product Type: Bipolar Transistor Array
Series: BC847BPDW1
Canonical Name: BC847BPDW1T1G
Subcategory: Complementary NPN/PNP

BC847BPDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC847BPDW1T1G Estimated Pricing

Qty Low High
1+ $0.27 $0.27
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BPDW1T1G Features

  • Complementary NPN/PNP pair in single package.
  • Rated for 45V collector-emitter voltage.
  • 100mA continuous collector current.
  • Minimum DC current gain of 200 at 2mA.
  • RoHS and Halogen-Free compliant.

BC847BPDW1T1G Applications

  • Ideal for general purpose amplifier circuits.
  • Suitable for low power surface mount applications.
  • Used in audio preamplifiers and driver stages.
  • Can be used in signal switching and logic level translation.

BC847BPDW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BC847BPDW1T1G?

45 V for both NPN and PNP transistors.

What package does the BC847BPDW1T1G come in?

Surface-mount SOT-363 (SC-88/SC70-6).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BC847BPDW1T1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

What is the minimum DC current gain (hFE)?

200 at Ic=2 mA, Vce=5 V.

What is the transition frequency?

100 MHz typical.

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