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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
350,000 pcs
|
350000 pcs | On Request | 1 | On Request | On Request | 1830+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Breakdown Voltage (VCBO) (Minimum) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (VEBO) (Minimum) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC847BFZ-7B is an NPN small signal bipolar junction transistor manufactured by Diodes Incorporated. It features a minimum collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA, making it suitable for general-purpose switching and amplification applications.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 at Ic=2mA and Vce=5V, a maximum Vce saturation voltage of 300mV at Ib=5mA and Ic=100mA, and a typical transition frequency of 100MHz. The device also has a collector-base breakdown voltage of 50V and an emitter-base breakdown voltage of 6V.
The transistor is housed in a 3-XFDFN surface mount package (supplier device package X2-DFN0606-3) and supports an operating junction temperature range of -55°C to 150°C. Power dissipation is rated at 435mW. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
This component is designed for surface mount assembly and is suitable for compact electronic designs where space is at a premium. Its electrical characteristics make it appropriate for low-power switching circuits, signal amplification, and general-purpose transistor applications in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.72 | $0.72 |
| 10+ | $0.44 | $0.44 |
| 100+ | $0.29 | $0.29 |
| 500+ | $0.22 | $0.22 |
| 1,000+ | $0.18 | $0.18 |
| 5,000+ | $0.16 | $0.16 |
| 10,000+ | $0.13 | $0.13 |
| 20,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is 45V.
The continuous collector current rating is 100mA.
The transistor is available in a 3-XFDFN surface mount package, with supplier device package X2-DFN0606-3.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant as stated in the datasheet.
The minimum DC current gain (hFE) is 200 at Ic=2mA and Vce=5V.
The typical transition frequency (fT) is 100MHz.