BC847BE6327 The Infineon Technologies BC847BE6327 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a 45V collector-emitter breakdown voltage and a 100 mA collector current.
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BC847BE6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BC847BE6327 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a 45V collector-emitter breakdown voltage and a 100 mA collector current.
✓ Total Stock: 6,440 pcs
$ Price Range: $1.93

BC847BE6327 Available from 1 distributor

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BC847BE6327 Specifications Quick View

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BC847BE6327 Description

Short technical summary and product information.

The Infineon Technologies BC847BE6327 is a single NPN bipolar junction transistor (BJT) suitable for various electronic circuits. It features a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 100 mA.

 

This transistor operates at a frequency of 250MHz and has a power dissipation rating of 330 mW. It is available in a surface-mount PG-SOT23 package, making it suitable for compact designs. The Vce saturation is a maximum of 60 at specified Ib and Ic conditions.

 

Designed for surface mounting, the BC847BE6327 is a reliable component for amplification and switching applications. Its specifications make it a versatile choice for engineers designing electronic systems where space and performance are critical.

BC847BE6327 Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: Infineon Technologies BC847BE6327 NPN Bipolar Junction Transistor
Subcategory: Single Bipolar Transistors

BC847BE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC847BE6327 Estimated Pricing

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1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BE6327 Features

  • NPN bipolar junction transistor.
  • 45V collector-emitter breakdown voltage.
  • 100 mA maximum collector current.
  • 250MHz operating frequency.
  • Surface mount PG-SOT23 package.

BC847BE6327 Applications

  • Used in RF signal amplification
  • Suitable for low-power switching circuits
  • Ideal for small-signal amplification
  • Designed for surface-mount assembly

BC847BE6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the BC847BE6327?

The collector-emitter breakdown voltage is 45 V.

What is the maximum collector current for this NPN transistor?

The maximum collector current is 100 mA.

What type of transistor is the BC847BE6327?

It is an NPN bipolar junction transistor.

What is the operating frequency of the BC847BE6327?

The operating frequency is 250MHz.

What is the package type for the BC847BE6327?

It is a surface mount PG-SOT23 package.

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