BC847BDW1T3G

The BC847BDW1T3G is a dual NPN bipolar junction transistor designed for general purpose amplifier applications. Manufactured by ON Semiconductor, it integrates two NPN transistors in a single surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45 V, collector-base voltage (VCBO) of 50 V, and emitter-base voltage (VEBO) of 6.0 V. The continuous collector current rating is 100 mA, with a power dissipation of 380 mW at 25°C ambient on an FR-5 board. The device offers a DC current gain (hFE) of 200 minimum at 2 mA collector current and 5 V VCE, and a transition frequency (fT) of 100 MHz. The saturation voltage (VCE(sat)) is 600 mV maximum at 100 mA collector current and 5 mA base current. The transistors are housed in a compact 6-pin SOT-363/SC-88 package, suitable for low-power surface-mount applications. The operating temperature range is -55°C to 150°C junction temperature. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free. It is designed for general purpose amplification and switching in consumer, industrial, and automotive electronics (AEC-Q101 qualified for automotive variants). The dual transistor configuration saves board space and improves thermal tracking in differential amplifier stages.