BC847BDW1T1G Dual NPN general purpose transistor in SOT-363 package. 45V collector-emitter breakdown voltage, 100mA continuous collector current.
Mfr Part #:

BC847BDW1T1G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual NPN general purpose transistor in SOT-363 package. 45V collector-emitter breakdown voltage, 100mA continuous collector current.
✓ Total Stock: 329,362 pcs
$ Price Range: $0.04 - $0.19

BC847BDW1T1G Available from 7 distributors

✓ Authorised
✓ Non-Authorised

BC847BDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC847BDW1T1G Description

Short technical summary and product information.

The BC847BDW1T1G is a dual NPN general purpose transistor from onsemi, designed for low power surface mount amplifier applications. Each transistor features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA. The DC current gain (hFE) ranges from 200 to 450 at 2mA collector current, ensuring consistent amplification performance.

 

Housed in a compact SOT-363 (SC-88) surface mount package, this device offers a power dissipation of 380mW per transistor on an FR-5 board. The operating junction temperature range spans -55°C to 150°C, suitable for demanding environments. The transistors are Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

 

Typical applications include general purpose amplification, signal processing, and switching circuits where space is constrained. The dual transistor configuration saves board space and simplifies layout in designs requiring matched NPN pairs.

BC847BDW1T1G Quick Information

Product Type: Bipolar Junction Transistor (BJT) Array
Series: BC847
Canonical Name: BC847BDW1T1G Dual NPN General Purpose Transistor
Subcategory: Dual NPN Array

BC847BDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC847BDW1T1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BDW1T1G Features

  • Dual NPN transistors in one package.
  • 45V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • DC current gain 200-450 at 2mA.
  • Surface mount SOT-363 package.

BC847BDW1T1G Applications

  • General purpose amplifier circuits.
  • Signal processing and switching.
  • Low power surface mount applications.
  • Audio preamplifier stages.

BC847BDW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the BC847BDW1T1G?

The operating junction temperature range is -55°C to 150°C.

Is the BC847BDW1T1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

What package does the BC847BDW1T1G come in?

It is available in a 6-TSSOP, SC-88, SOT-363 surface mount package.

What type of transistor is the BC847BDW1T1G?

It is a dual NPN bipolar junction transistor array.

What is the collector-emitter breakdown voltage?

The minimum VCEO is 45V at 10mA collector current.

What is the maximum continuous collector current?

The maximum continuous collector current is 100mA.

What is the DC current gain (hFE) range?

The hFE ranges from 200 to 450 at 2mA collector current and 5V VCE.

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