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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,910 pcs
|
2910 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter On Voltage (Minimum/Typical/Maximum @ VCE = -5 V, IC = -2 mA) | |
| Base Emitter On Voltage (Typical @ Vce=-5 V, Ic=-10 mA) | |
| Base-Emitter Saturation Voltage (Typical @ Ic = 10 mA, Ib = 0.5 mA) | |
| Base-Emitter Saturation Voltage (Typical @ Ic = 100 mA, Ib = 5 mA) | |
| Collector Peak Current (ICM) | |
| Collector-Base Capacitance (CCBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ IC = 10 mA, IB = 0.5 mA) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=100 mA, Ib=5 mA) | |
| Current | |
| DC Current Gain (Minimum/Typical/Maximum @ Vce = 5 V, Ic = 2 mA) | |
| DC Current Gain (Minimum/Typical/Maximum @ Vce=5 V, Ic=10 µA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (NF) | |
| Operating Junction Temperature (Tj) | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Ptot) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC847B is a silicon epitaxial planar NPN transistor from STMicroelectronics designed for general-purpose switching and amplification in surface mount applications. It is housed in a miniature SOT-23 plastic package suitable for automated assembly.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45V, a maximum collector current (IC) of 100mA, and a peak collector current (ICM) of 200mA. The device offers a DC current gain (hFE) range of 200 to 450 at Vce=5V and Ic=2mA, with a typical transition frequency (fT) of 100MHz. Collector-emitter saturation voltage is typically 0.09V at Ic=10mA.
The transistor is well suited for portable equipment and small load switch applications due to its high gain and low saturation voltage. It is supplied in tape and reel packaging for high-volume manufacturing. The complementary PNP type is the BC857B.
The maximum collector-emitter voltage (VCEO) is 45V.
The maximum continuous collector current (IC) is 100mA, with a peak current (ICM) of 200mA.
The BC847B is available in a SOT-23 surface mount package.
The storage temperature range is -65°C to 150°C, and the maximum operating junction temperature is 150°C.
At Vce=5V and Ic=2mA, the DC current gain (hFE) ranges from 200 minimum to 450 maximum, with a typical value of 290.
The BC847B is listed as RoHS3 compliant, but this information is unverified and has low confidence.
The complementary PNP type is the BC857B.