BC847ALT1G NPN bipolar transistor rated for 45V collector-emitter voltage and 100mA continuous current in a SOT-23-3 surface mount package.
Mfr Part #:

BC847ALT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor rated for 45V collector-emitter voltage and 100mA continuous current in a SOT-23-3 surface mount package.
Total Stock: 801,720 pcs
$ Price Range: $0.03 - $0.28

BC847ALT1G Available from 8 distributors

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Non-Authorised

BC847ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC847ALT1G Description

Short technical summary and product information.

The BC847ALT1G is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA. The DC current gain (hFE) is typically 110 at 2mA collector current and 5V VCE. The transistor offers a transition frequency of 100MHz, making it suitable for low-frequency switching and amplification applications.

 

This device is housed in a compact SOT-23-3 surface mount package, ideal for space-constrained designs. It has an operating temperature range of -55°C to 150°C and a maximum power dissipation of 300mW on an alumina substrate. The BC847ALT1G is also rated for ESD robustness with a human body model of over 4000V and machine model over 400V.

 

The transistor is Pb-Free and Halogen Free, with RoHS compliance indicated. It is designed for general-purpose switching and amplification in consumer, industrial, and automotive applications where reliable performance is required.

BC847ALT1G Quick Information

Product Type: Bipolar Transistor (BJT)
Series: BC847
Canonical Name: BC847ALT1G NPN Bipolar Transistor
Subcategory: Single NPN

BC847ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC847ALT1G Estimated Pricing

Qty Low High
1+ $0.28 $0.28
10+ $0.12 $0.12
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847ALT1G Features

  • NPN transistor with 45V collector-emitter voltage.
  • 100mA continuous collector current rating.
  • Surface mount SOT-23-3 package for compact designs.
  • ESD robust with >4000V human body model rating.
  • 100MHz transition frequency for general-purpose use.

BC847ALT1G Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification in audio systems.
  • Ideal for general-purpose logic level shifting.
  • Employed in voltage regulation feedback loops.

BC847ALT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BC847ALT1G?

The maximum collector-emitter voltage (VCEO) is 45V.

What package is the BC847ALT1G available in?

It is available in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59).

What is the operating temperature range of BC847ALT1G?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the BC847ALT1G RoHS compliant?

The datasheet states RoHS3 compliance, but this is unverified. The device is confirmed Pb-Free and Halogen Free.

What is the DC current gain (hFE) of BC847ALT1G?

The minimum hFE is 110 at Ic=2mA and Vce=5V.

What is the transition frequency of BC847ALT1G?

The transition frequency (ft) is 100 MHz.

What ESD ratings does the BC847ALT1G have?

ESD rating for Human Body Model is >4000V, and for Machine Model is >400V.

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