| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,221 pcs
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1221 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC846SE6327 is a dual NPN bipolar junction transistor from Infineon Technologies, designed for general purpose amplification and switching applications. It comprises two NPN transistors in a single surface-mount package. Key electrical characteristics include a collector-emitter breakdown voltage of 65V, a maximum saturation voltage of 600mV at 100mA collector current, and a minimum DC current gain of 200 at 2mA, 5V. The transition frequency is 250 MHz, making it suitable for low-frequency applications. Power dissipation is rated at 250 mW. The device is housed in a 6-VSSOP, SC-88, SOT-363 package (PG-SOT363-6-1 supplier package), enabling compact surface mount assembly. Operating junction temperature is up to 150°C. The transistor is RoHS3 compliant. It is ideal for space-constrained designs requiring multiple transistors, such as in signal processing, driver stages, and low-power switching circuits.
The package is 6-VSSOP, SC-88, SOT-363, with supplier device package PG-SOT363-6-1.
The operating junction temperature is 150°C.
Yes, it is listed as RoHS3 compliant.
It is a dual NPN transistor (2 NPN).
The Vceo is 65V.
The minimum hFE is 200 at Ic=2mA, Vce=5V.
The ft is 250 MHz.