| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,246 pcs
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1246 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC846BW E6327 from Infineon Technologies is a bipolar junction transistor (BJT) of the NPN type. It is designed for surface mount applications and comes in a SC-70, SOT-323 package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. The transistor exhibits a typical DC current gain (hFE) of 200 at 2mA and 5V. Its transition frequency is rated at 250MHz, and it can dissipate up to 250mW of power.
The operating temperature range for this component is from -55°C to 150°C (TJ). The Vce saturation voltage is a maximum of 0.6V at 5mA collector current and a specified base current. The collector cutoff current (ICBO) is a maximum of 15nA.
This component is suitable for various electronic circuits requiring a general-purpose NPN transistor in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BC846BW E6327 is 100 mA.
The collector-emitter breakdown voltage (Vceo) for the BC846BW E6327 is 65 V.
The operating temperature range for the BC846BW E6327 is -55°C to 150°C (TJ).
The BC846BW E6327 is supplied in a SC-70, SOT-323 package.
The BC846BW E6327 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BC846BW E6327 is 1 Unlimited.