BC846BMTF NPN epitaxial silicon transistor designed for switching and amplifier applications. Features 65V VCEO, 100mA collector current, and hFE of 200-450.
Mfr Part #:

BC846BMTF

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN epitaxial silicon transistor designed for switching and amplifier applications. Features 65V VCEO, 100mA collector current, and hFE of 200-450.
Total Stock: 1,920 pcs

BC846BMTF Available from 4 distributors

Authorised
Non-Authorised

BC846BMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Emitter On Voltage (Typical @ V_CE=5 V, I_C=10 mA)
Base Emitter On Voltage (Typical/Maximum @ V_CE=5 V, I_C=2 mA)
Collector Cut-off Current (I_CBO)
Collector Emitter Saturation Voltage (Typical/Maximum @ I_B=0.5 mA, I_C=10 mA)
Collector-Base Voltage (V_CBO)
Current
DC Current Gain (Minimum/Maximum @ V_CE=5 V, I_C=2 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (V_EBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (C_ob)
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC846BMTF Description

Short technical summary and product information.

The BC846BMTF is an NPN epitaxial silicon transistor from On Semiconductor, part of the BC846 series. It is designed for switching and amplifier applications, and is suitable for automatic insertion in thick and thin-film circuits. The device is complementary to the PNP BC856, BC857, BC858, BC859, and BC860 series.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 65 V, a maximum collector current of 100 mA, and a power dissipation of 310 mW. The DC current gain (hFE) is classified as B, ranging from 200 to 450 at VCE=5V and IC=2mA. The transistor offers a typical current gain bandwidth product (fT) of 300 MHz and a low output capacitance of 4.5 pF, making it suitable for high-frequency applications.

 

The device is housed in a surface-mount SOT-23-3 package, which is lead-free and RoHS compliant. It has a maximum junction temperature of 150°C and a thermal resistance (junction-to-ambient) of 403°C/W on a standard FR-4 PCB. The BC846BMTF is supplied in tape and reel packaging for automated assembly.

 

Typical applications include general-purpose switching, signal amplification, and driver stages in consumer electronics, industrial controls, and communication equipment.

BC846BMTF Quick Information

Product Type: Transistor - Bipolar (BJT) - Single
Series: BC846
Canonical Name: NPN Epitaxial Silicon Transistor
Subcategory: Single NPN Transistor

BC846BMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BC846BMTF Features

  • NPN epitaxial silicon transistor design.
  • Maximum collector-emitter voltage of 65V.
  • DC current gain (hFE) range of 200 to 450.
  • Low collector-emitter saturation voltage of 600mV.
  • Surface mount SOT-23-3 package.

BC846BMTF Applications

  • General purpose switching and amplifier circuits.
  • Suitable for automatic insertion in circuits.
  • Driver stages in consumer electronics.
  • Signal amplification in communication equipment.
  • Low-power switching in industrial controls.

BC846BMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC846BMTF?

65 V.

What package type is the BC846BMTF available in?

SOT-23-3 surface mount package.

What is the maximum junction temperature of the BC846BMTF?

150 °C.

Is the BC846BMTF RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the DC current gain (hFE) of the BC846BMTF?

200 to 450 at VCE=5V, IC=2mA.

What is the maximum collector current of the BC846BMTF?

100 mA.

What is the transition frequency (fT) of the BC846BMTF?

300 MHz typical.

Home
Account

Categories