BC846BDW1T1G Dual NPN general purpose transistor from On Semiconductor. 65V VCEO, 100mA continuous collector current, 380mW power dissipation. Surface mount SOT-363 package.
Mfr Part #:

BC846BDW1T1G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual NPN general purpose transistor from On Semiconductor. 65V VCEO, 100mA continuous collector current, 380mW power dissipation. Surface mount SOT-363 package.
✓ Total Stock: 959,436 pcs
$ Price Range: $0.05 - $0.26

BC846BDW1T1G Available from 7 distributors

✓ Authorised
✓ Non-Authorised

BC846BDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC846BDW1T1G Description

Short technical summary and product information.

The BC846BDW1T1G is a dual NPN general purpose transistor from On Semiconductor, designed for low power surface mount amplifier applications. Each transistor features a maximum collector-emitter voltage of 65V and a continuous collector current rating of 100mA. The device offers a minimum DC current gain of 200 at 2mA collector current and 5V collector-emitter voltage, with a typical transition frequency of 100MHz.

 

Housed in the compact SOT-363/SC-88 surface mount package, the BC846BDW1T1G provides a total device power dissipation of 380mW on an FR-5 board at 25°C ambient temperature. The operating junction temperature range spans -55°C to 150°C, making it suitable for a wide variety of environments.

 

This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting current environmental standards. The dual transistor configuration in a single package saves board space and simplifies assembly in applications requiring matched or independent NPN transistors.

BC846BDW1T1G Quick Information

Product Type: Bipolar Junction Transistor Array
Series: BC846BDW1
Canonical Name: BC846BDW1T1G Dual NPN General Purpose Transistor
Subcategory: Transistor Array

BC846BDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC846BDW1T1G Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.15 $0.15
100+ $0.09 $0.09
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC846BDW1T1G Features

  • Dual NPN transistor in one package.
  • 65V maximum collector-emitter voltage.
  • 100mA continuous collector current.
  • Surface mount SOT-363 package.
  • RoHS compliant and Pb-Free.

BC846BDW1T1G Applications

  • General purpose amplifier circuits.
  • Low power switching applications.
  • Signal processing and driver stages.

BC846BDW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC846BDW1T1G?

The maximum collector-emitter voltage (VCEO) is 65V.

What is the continuous collector current rating?

The maximum continuous collector current is 100mA.

What package is the BC846BDW1T1G available in?

It is available in a surface mount SOT-363/SC-88 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC846BDW1T1G RoHS compliant?

Yes, the device is RoHS3 compliant and Pb-Free.

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