| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,350 pcs
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4350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC846B RFG from Taiwan Semiconductor is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 65V and a maximum continuous collector current (Ic) of 0.1A. The transistor has a power dissipation rating of 200mW and operates across a wide temperature range from -55C to +150C.
This component is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. Its electrical characteristics include a typical gain bandwidth product (fT) of 100MHz and a minimum DC collector/base gain (hFE) of 200, with a maximum hFE of 450. The BC846B RFG is part of the Bc846/7/8 series.
Key electrical parameters include a collector-base voltage (VCBO) of 80V and an emitter-base voltage (VEBO) of 6V. The typical collector-emitter saturation voltage is 0.5V. The transistor utilizes silicon technology and is configured as a single NPN device. It is supplied in cut tape packaging with a factory pack quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC846B RFG is 65V.
The maximum continuous collector current (Ic) for the BC846B RFG is 0.1A.
The power dissipation (Pd) rating of the BC846B RFG is 200mW.
The BC846B RFG operates from a minimum temperature of -55C to a maximum temperature of +150C.
The BC846B RFG is supplied in a SOT-23-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BC846B RFG is 1 Unlimited.