| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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819,000 pcs
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819000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC846AWT1G from ON Semiconductor is a general-purpose NPN silicon transistor designed for amplifier applications. It is housed in a compact SC-70/SOT-323 surface-mount package, making it suitable for low-power applications.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 65V and a continuous collector current (IC) of 100mA. The transistor offers a DC current gain (hFE) ranging from 110 to 200 at 10mA collector current and 5V collector-emitter voltage. Its current-gain-bandwidth product (fT) is 100 MHz at 10mA collector current and 5V collector-emitter voltage.
Thermal performance is supported by a total device dissipation of 150mW at 25°C on an FR-5 board, with a junction-to-ambient thermal resistance of 833°C/W. The operating and storage temperature range is -55°C to +150°C.
This series is available in Pb-Free packages. The SC-70/SOT-323 package is designed for low power surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Breakdown Voltage (V(BR)CEO) is 65V at IC = 10 mA.
The maximum continuous Collector Current (IC) is 100 mA.
The DC Current Gain (hFE) ranges from 110 to 200 when IC = 10 mA and VCE = 5.0 V.
The Current-Gain-Bandwidth Product (fT) is 100 MHz at IC = 10 mA, VCE = 5.0 Vdc, and f = 100 MHz.
The junction and storage temperature range is -55 to +150 °C.
The package type is SC-70/SOT-323.
The mounting type is Surface Mount.