BC846AMTF NPN epitaxial silicon transistor rated for 65V collector-emitter voltage and 100mA collector current, in a SOT23-3 surface mount package.
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BC846AMTF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN epitaxial silicon transistor rated for 65V collector-emitter voltage and 100mA collector current, in a SOT23-3 surface mount package.
Total Stock: 16,094 pcs

BC846AMTF Available from 1 distributor

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BC846AMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Emitter Voltage (Maximum)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe (Minimum @ VCE = 5 V, IC = 2 mA)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC846AMTF Description

Short technical summary and product information.

The BC846AMTF is an NPN epitaxial silicon transistor from On Semiconductor, designed for switching and amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current of 100mA, making it suitable for low-power signal processing and general-purpose switching.

 

With a DC current gain (hFE) of 110 minimum at 2mA and 5V, and a current gain bandwidth product (fT) of 300MHz typical, this transistor offers good amplification performance for frequencies up to VHF. The collector-emitter saturation voltage is 600mV maximum at 100mA and 5mA base current, ensuring low power loss in saturation.

 

The device is housed in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59), which is ideal for automated assembly in thick and thin-film circuits. It is rated for a maximum power dissipation of 310mW and a junction temperature up to 150°C. The BC846AMTF is RoHS3 compliant and REACH unaffected, with an MSL of 1 (unlimited).

BC846AMTF Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BC846AMTF NPN Epitaxial Silicon Transistor
Subcategory: Single Bipolar Junction Transistor

BC846AMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: No

BC846AMTF Features

  • NPN epitaxial silicon transistor design.
  • 65V maximum collector-emitter voltage.
  • 100mA maximum collector current.
  • 300MHz typical gain bandwidth product.
  • SOT23-3 surface mount package.

BC846AMTF Applications

  • Switching and amplifier applications.
  • Automatic insertion in thick-film circuits.
  • Automatic insertion in thin-film circuits.
  • General purpose low-power signal processing.

BC846AMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC846AMTF?

The maximum VCEO is 65V.

What is the maximum collector current of the BC846AMTF?

The maximum collector current is 100mA.

What is the package type of the BC846AMTF?

The device is available in a SOT-23-3 surface mount package (also TO-236-3, SC-59).

What is the operating temperature range of the BC846AMTF?

The maximum junction temperature is 150°C.

Is the BC846AMTF RoHS compliant?

Yes, it is RoHS3 compliant.

What is the DC current gain (hFE) of the BC846AMTF?

The minimum hFE is 110 at VCE = 5V and IC = 2mA.

What is the current gain bandwidth product (fT) of the BC846AMTF?

The typical fT is 300MHz at VCE = 5V and IC = 10mA.

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