| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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112 pcs
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112 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC846 from NXP Semiconductors is an NPN Epitaxial Silicon Transistor suitable for automatic insertion in thick and thin-film circuits. It is designed for switching and amplifier applications.
Key electrical characteristics include a maximum Collector-Base Voltage of 80V and a maximum Collector-Emitter Voltage of 65V. The device can handle a DC Collector Current of up to 100mA. The typical DC Current Gain (hFE) is 110 at VCE = 5V and IC = 2mA, with a maximum of 800. The Current Gain Bandwidth Product (fT) is typically 100MHz at VCE = 5V and IC = 10mA.
This transistor is housed in a compact SOT-23 surface-mount package, making it suitable for automated assembly processes. The operating temperature range is from -65°C to +150°C, with a maximum junction temperature of 150°C. The power dissipation is rated at 310mW.
The BC846 series is a complement to PNP transistors like the BC856, BC857, and BC858 series, offering design flexibility for complementary push-pull stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC846 comes in a SOT-23 surface-mount package.
The maximum collector-emitter voltage is 65V.
The maximum collector current is 100mA.
The typical DC current gain is 110 at VCE=5V and IC=2mA, with a maximum of 800.
The transition frequency is 100 MHz.
The power dissipation is 310 mW.
The storage temperature range is -65 to +150°C.