| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Transistor Type |
The PANJIT BC817-40W_R2_00001 is a PNP pre-biased bipolar junction transistor (BJT) designed for various electronic applications. This component features a maximum collector-emitter voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. Its maximum power dissipation is rated at 150mW.
The transistor has a typical DC current gain (hFE) of 30 at 5mA and 5V. It also includes integrated base and emitter resistors, R1 and R2, both at 10 kOhms, simplifying circuit design. The Vce saturation voltage is a maximum of 300mV at 500µA collector current and 10mA base current.
Packaged in a surface-mount SOT-416FL (EMT3F) case, the BC817-40W_R2_00001 is suitable for automated assembly processes. Its pre-biased nature and integrated resistors make it a convenient choice for applications requiring a simple switching or amplification function.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) is 100mA.
The maximum power dissipation is 150mW.
The Vce saturation voltage is a maximum of 300mV at 500µA collector current and 10mA base current.
It is supplied in a surface mount SOT-416FL package.
It has integrated base resistor R1 of 10 kOhms and emitter resistor R2 of 10 kOhms.