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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,780 pcs
|
2780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,090 pcs
|
1090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base-Emitter On Voltage (Max) | |
| Collector Cutoff Current (Maximum @ VCB = -20 V) | |
| Collector Cutoff Current (Maximum @ VCB = 20 V, TA = 150 °C) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| Current Gain Bandwidth Product (fT) | |
| DC Current Gain (Minimum @ Ic=500 mA, Vce=1 V) | |
| DC Current Gain (Minimum/Maximum @ IC = -100 mA; VCE = -1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Delay Time | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Industrial Grade | |
| Junction and Storage Temperature Range | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Output Capacitance (Cobo) | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate) | |
| Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board) | |
| Rise Time | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC817-25LT1 is an NPN silicon bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplifier applications. Key electrical ratings include a maximum collector-emitter voltage of 45V, collector-base voltage of 50V, and emitter-base voltage of 5V. The continuous collector current is rated at 500mA, with a power dissipation of 225mW on FR-5 board (300mW on alumina substrate).
DC current gain (hFE) ranges from 160 to 400 at 100mA/1V, with a minimum of 40 at 500mA/1V. The transistor offers a transition frequency of at least 100MHz and a typical output capacitance of 10pF. Maximum collector cutoff current is 100nA at 20V VCB, increasing to 5µA at 150°C. The device is housed in a surface-mount SOT-23 package (TO-236-3, SC-59) and is Pb-Free, Halogen Free, and RoHS compliant.
This part is part of the BC817-25L series, which includes variants with different gain ranges. Cross-references include BC817-16L and BC817-40L series. Suitable for low-power circuits requiring moderate voltage and current handling.
| Qty | Low | High |
|---|---|---|
| 7,869+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 45V.
The package is SOT-23 (TO-236-3, SC-59).
The junction and storage temperature range is -65°C to +150°C.
Yes, it is RoHS3 compliant, and also Pb-Free and Halogen Free.
The DC current gain ranges from 160 minimum to 400 maximum at 100mA/1V, and a minimum of 40 at 500mA/1V.
The maximum continuous collector current is 500mA.
The minimum current-gain bandwidth product (fT) is 100MHz.