| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,845 pcs
|
2845 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BC817-16 is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 500mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 100mA and 1V, and a transition frequency of 100MHz. The transistor has a maximum power dissipation of 250mW and operates at temperatures up to 150°C.
This component is housed in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3, and is designed for surface mounting. Its compact size and surface-mount capability make it suitable for integration into printed circuit boards where space is a consideration.
The BC817-16 is qualified to AEC-Q101 standards, indicating its suitability for automotive and other demanding applications. It is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BC817-16 transistor is 500 mA.
The collector-emitter breakdown voltage of the BC817-16 is 45 V.
The maximum power dissipation for the BC817-16 transistor is 250 mW.
The minimum DC current gain (hFE) of the BC817-16 is 100 at 100mA and 1V.
The operating temperature for the BC817-16 is up to 150°C (TJ).
The BC817-16 is supplied in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3.
The BC817-16 is RoHS3 Compliant.