| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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520 pcs
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520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC817 is an NPN bipolar junction transistor designed for general purpose switching and amplification applications. It comes in a compact SOT-23 plastic package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 45 V. The device also features a DC current gain (hFE) ranging from 100 to 600 at 100 mA collector current and 1 V collector-emitter voltage. Its transition frequency (fT) is 100 MHz at 10 mA collector current and 5 V collector-emitter voltage.
The operating temperature range is from -65 °C to +150 °C, with a junction temperature limit of 150 °C. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 printed-circuit board.
This transistor is suitable for various electronic circuits requiring reliable switching or amplification capabilities. Its small SOT-23 package allows for easy surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the BC817 transistor is 500 mA.
The collector-emitter breakdown voltage (VCEO) for the BC817 is 45 V.
The BC817 transistor is supplied in a SOT-23 package.
The operating ambient temperature range for the BC817 is -65 °C to +150 °C.
The typical DC current gain (hFE) of the BC817 at 100 mA collector current and 1 V collector-emitter voltage is 100 to 600.
The transition frequency (fT) of the BC817 is 100 MHz at 10 mA collector current and 5 V collector-emitter voltage.