BC817-16LT3G NPN silicon general purpose transistor. 45V VCEO, 500mA IC, DC current gain 100-250, SOT-23-3 surface mount package.
Mfr Part #:

BC817-16LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon general purpose transistor. 45V VCEO, 500mA IC, DC current gain 100-250, SOT-23-3 surface mount package.
Total Stock: 60,000 pcs
$ Price Range: $0.03 - $0.14

BC817-16LT3G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,000 pcs
60000 pcs On Request 1 On Request On Request On Request On Request On Request

BC817-16LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base-Emitter On Voltage (VBE(ON))
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Delay Time (td)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Output Capacitance (Cobo)
Power
RthJA (Maximum @ Alumina Substrate)
RthJA (Maximum @ FR -5 Board)
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ IC=-500 mA, VCE=-1 V)
pd (Maximum @ FR -5 Board, TA=25 °C)

BC817-16LT3G Description

Short technical summary and product information.

The BC817-16LT3G is an NPN silicon transistor designed for general purpose amplification and switching applications. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 500mA.

 

The device offers a DC current gain (hFE) range of 100 to 250 at Ic=100mA, Vce=1V, and a minimum hFE of 40 at 500mA. Transition frequency is typically 100MHz. The collector-emitter saturation voltage is 700mV max at 500mA/50mA.

 

Packaged in a SOT-23-3 (TO-236) surface mount package, the transistor is suitable for compact PCB designs. Thermal characteristics include a power dissipation of 225mW on FR-5 board and 300mW on alumina substrate, with junction-to-ambient thermal resistance of 556°C/W and 417°C/W respectively.

 

The device is RoHS compliant, Pb-Free, and Halogen Free/BFR Free. It is manufactured by onsemi, a leading semiconductor supplier.

BC817-16LT3G Quick Information

Product Type: NPN Bipolar Junction Transistor
Series: BC817-16L
Canonical Name: BC817-16LT3G
Subcategory: Single NPN

BC817-16LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC817-16LT3G Estimated Pricing

Qty Low High
1+ $0.14 $0.14
10+ $0.09 $0.09
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
2,500+ $0.03 $0.03
5,000+ $0.03 $0.03
10,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC817-16LT3G Features

  • NPN silicon general purpose transistor.
  • Maximum VCEO of 45V DC.
  • Continuous collector current 500mA.
  • DC current gain 100 to 250.
  • SOT-23-3 surface mount package.

BC817-16LT3G Applications

  • General purpose switching and amplification.
  • Low power driver circuits.
  • Signal processing in consumer electronics.

BC817-16LT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for BC817-16LT3G?

The BC817-16LT3G is available in SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

The junction and storage temperature range is -65°C to +150°C.

Is the BC817-16LT3G RoHS compliant?

Yes, the device is RoHS3 compliant as per the datasheet.

What is the maximum collector-emitter voltage?

The maximum VCEO is 45V.

What is the maximum collector current?

The maximum continuous collector current is 500mA.

What is the DC current gain (hFE) of the BC817-16LT3G?

The hFE is 100 to 250 at Ic=100mA, Vce=1V, and minimum 40 at Ic=500mA, Vce=1V.

What is the transition frequency?

The minimum transition frequency is 100MHz at Ic=10mA, Vce=5V, f=100MHz.

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