TC7SH00FUTE85L,JF
Toshiba
The Toshiba TC7SH00FUTE85L,JF is a logic gate IC. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The NEX BC817-16-Q is a single NPN bipolar junction transistor (BJT) designed for control and signal processing applications. It comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V DC and a continuous collector current (IC) of 800mA. The device has a typical DC current gain (hFE) of 160 at 1V VCE and 100mA IC. Its maximum power dissipation is rated at 0.31W at 25°C ambient temperature. The operating junction temperature ranges from -55°C to 150°C, and it is housed in a case with UL 94-V0 flammability rating.
This transistor is suitable for various industrial, mobility, energy, and consumer applications. Its SOT-23 package facilitates easy surface mounting on printed circuit boards. The component is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC817-16-Q is 45V DC.
The continuous collector current (IC) rating for the BC817-16-Q is 800mA.
The typical DC current gain (hFE) of the BC817-16-Q is 160 at V CE 1V and I C 100mA.
The BC817-16-Q operates within a junction temperature range of -55°C to 150°C.
The BC817-16-Q is supplied in a SOT-23 surface-mount package.
Yes, the BC817-16-Q is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the BC817-16-Q is 1.
