| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,412 pcs
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1412 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,085 pcs
|
1085 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BC817-16,215 is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 500mA.
Key electrical characteristics include a maximum power dissipation of 250mW and a transition frequency of 100MHz. The DC current gain (hFE) is a minimum of 100 at 100mA and 1V. Saturation voltage is specified at a maximum of 700mV at 50mA and 500mA, with a collector cutoff current of 100nA (ICBO).
This transistor operates within a temperature range of up to 150°C (TJ) and is qualified to AEC-Q101 standards. It is housed in a TO-236AB (SOT-23) surface-mount package, making it suitable for compact PCB designs. The mounting type is surface mount, requiring appropriate soldering techniques for optimal thermal management and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BC817-16,215 transistor is 500mA.
The collector-emitter breakdown voltage of the BC817-16,215 is 45V.
The maximum power dissipation for the BC817-16,215 transistor is 250mW.
The operating temperature for the BC817-16,215 transistor is up to 150°C (TJ).
The BC817-16,215 transistor is supplied in a TO-236AB (SOT-23) surface-mount package.
The BC817-16,215 transistor is RoHS3 Compliant.