BC808-25LT1G PNP bipolar junction transistor from On Semiconductor. Rated for 25V collector-emitter voltage and 500mA continuous current in a SOT23-3 surface mount package.
Mfr Part #:

BC808-25LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar junction transistor from On Semiconductor. Rated for 25V collector-emitter voltage and 500mA continuous current in a SOT23-3 surface mount package.
Total Stock: 21,000 pcs
$ Price Range: $0.03 - $0.18

BC808-25LT1G Available from 1 distributor

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Non-Authorised
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BC808-25LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base-Emitter On Voltage (Max @ Ic=500mA, Vbe=1V)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (Min @ Ic=-10mA)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Output Capacitance (Cobo) (Typ @ Vcb=10V, f=1MHz)
Power
Rth Ja (Maximum @ Alumina Substrate)
Rth Ja (Maximum @ FR -5 Board)
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ IC=-500 mA, VCE=-1 V)
hfe (Minimum/Maximum @ Ic=100 mA, Vce=1 V)
icbo (Maximum @ Vcb=20 V)
icbo (Maximum @ Vcb=20 V, Tj=150 °C)
pd (Maximum @ FR -5 Board, TA=25 °C)

BC808-25LT1G Description

Short technical summary and product information.

The BC808-25LT1G is a PNP general purpose bipolar junction transistor manufactured by On Semiconductor. It is designed for general purpose switching and amplification applications.

 

It features a maximum collector-emitter voltage (VCEO) of -25V and a continuous collector current rating of -500mA. The DC current gain (hFE) ranges from 160 to 400 at 100mA, with a minimum of 40 at 500mA. The transition frequency (fT) is 100 MHz minimum.

 

The device is available in a SOT-23-3 (TO-236) surface mount package. Power dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate, with corresponding thermal resistances of 556°C/W and 417°C/W respectively. It operates over a junction temperature range of -55°C to 150°C.

 

This component is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, making it suitable for environmentally sensitive designs. Moisture sensitivity level is 1 (unlimited).

BC808-25LT1G Quick Information

Product Type: PNP Bipolar Junction Transistor
Canonical Name: BC808-25LT1G PNP General Purpose Transistor
Subcategory: Single PNP

BC808-25LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC808-25LT1G Estimated Pricing

Qty Low High
1+ $0.18 $0.18
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC808-25LT1G Features

  • PNP silicon transistor for general purpose use.
  • Rated for 25V collector-emitter voltage and 500mA current.
  • Surface mount SOT-23-3 package.
  • RoHS3, Pb-Free, and Halogen Free compliant.
  • 100 MHz minimum transition frequency.

BC808-25LT1G Applications

  • Suitable for switching and amplification circuits.
  • Ideal for portable and battery-powered devices.
  • Used in signal processing and driver stages.
  • Compatible with automated surface mount assembly.

BC808-25LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of BC808-25LT1G?

Maximum collector-emitter voltage (VCEO) is -25V.

What is the package type?

SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature (TJ).

Is BC808-25LT1G RoHS compliant?

Yes, RoHS3 compliant. Also Pb-Free and Halogen Free/BFR Free.

What is the DC current gain (hFE) of BC808-25LT1G?

Minimum 160 at 100mA/1V, minimum 40 at 500mA/1V, maximum 400 at 100mA/1V.

What is the maximum collector current?

-500 mA continuous.

What is the power dissipation?

225 mW on FR-5 board, 300 mW on alumina substrate at 25°C.

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