BC80740MTF PNP bipolar transistor from ON Semiconductor. Features 45V collector-emitter breakdown voltage, 800mA collector current, and 310mW power dissipation in a SOT-23-3 surface mount package.
Mfr Part #:

BC80740MTF

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor from ON Semiconductor. Features 45V collector-emitter breakdown voltage, 800mA collector current, and 310mW power dissipation in a SOT-23-3 surface mount package.
Total Stock: 9,099 pcs

BC80740MTF Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,101 pcs
3101 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,999 pcs
2999 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,999 pcs
2999 pcs On Request 1 On Request On Request On Request On Request On Request

BC80740MTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC80740MTF Description

Short technical summary and product information.

The BC80740MTF is a PNP bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage of 45V, a maximum collector current of 800mA, and a maximum power dissipation of 310mW. The DC current gain (hFE) is a minimum of 250 at 100mA collector current and 1V collector-emitter voltage. The transition frequency is typically 100MHz.

 

The transistor is housed in a SOT-23-3 surface mount package, also known as TO-236-3 or SC-59. It is suitable for automated assembly and space-constrained designs. The maximum junction temperature is 150°C.

 

This device is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). It is commonly used in load switching, driver circuits, and signal amplification.

BC80740MTF Quick Information

Product Type: Bipolar (BJT) Transistor
Series: BC807
Canonical Name: BC80740MTF PNP Transistor, 45V Vce, 800mA Ic, SOT-23-3
Subcategory: PNP Transistor

BC80740MTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BC80740MTF Features

  • PNP bipolar transistor with 45V breakdown voltage.
  • 800mA maximum collector current rating.
  • 310mW power dissipation in SOT-23-3 package.
  • Minimum DC current gain of 250.
  • 100MHz typical transition frequency.

BC80740MTF Applications

  • General purpose switching and amplification circuits.
  • Load driver for low-power devices.
  • Signal amplification in audio and RF stages.
  • Used in portable and battery-powered equipment.

BC80740MTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

45V minimum.

What package is the BC80740MTF available in?

SOT-23-3 (also TO-236-3, SC-59) surface mount package.

What is the maximum operating junction temperature?

150°C.

Is the BC80740MTF RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the DC current gain (hFE) of the BC80740MTF?

Minimum 250 at 100mA collector current and 1V collector-emitter voltage.

What is the collector-emitter saturation voltage?

Maximum 700mV at 500mA collector current and 50mA base current.

What is the transition frequency?

Typically 100MHz.

Home
Account

Categories