BC807-40WT1G PNP general purpose transistor with -45 V collector-emitter voltage and -500 mA continuous collector current. Housed in a surface-mount SC-70-3 (SOT323) package.
Mfr Part #:

BC807-40WT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP general purpose transistor with -45 V collector-emitter voltage and -500 mA continuous collector current. Housed in a surface-mount SC-70-3 (SOT323) package.
✓ Total Stock: 30,000 pcs
$ Price Range: $0.05 - $0.25

BC807-40WT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request On Request On Request On Request

BC807-40WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC807-40WT1G Description

Short technical summary and product information.

The BC807-40WT1G is a PNP silicon general purpose transistor from On Semiconductor, designed for a wide range of switching and amplification applications.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of -45 V, collector-base voltage (VCBO) of -50 V, and continuous collector current of -500 mA. The device offers a DC current gain (hFE) range of 250 to 600 at Ic = -100 mA, Vce = -1 V, and a minimum transition frequency (fT) of 100 MHz at Ic = -10 mA, Vce = -5 V. Maximum collector-emitter saturation voltage is -0.7 V at Ib = -50 mA, Ic = -500 mA.

 

The transistor is supplied in a surface-mount SC-70 (SOT-323) package, with a supplier device package of SC-70-3 (SOT323). It is rated for a power dissipation of 460 mW on an FR-5 board at 25°C ambient, with a junction-to-ambient thermal resistance of 272 °C/W. The operating junction temperature range is -55°C to 150°C.

 

The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It is available in tape and reel packaging with a standard quantity of 3000 pieces per reel.

BC807-40WT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC807-40W
Canonical Name: BC807-40WT1G PNP General Purpose Transistor
Subcategory: Single PNP

BC807-40WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC807-40WT1G Estimated Pricing

Qty Low High
1+ $0.25 $0.25
10+ $0.14 $0.14
100+ $0.09 $0.09
500+ $0.06 $0.06
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC807-40WT1G Features

  • PNP silicon general purpose transistor.
  • -45 V collector-emitter voltage rating.
  • -500 mA continuous collector current.
  • 100 MHz minimum transition frequency.
  • Surface-mount SC-70-3 (SOT323) package.

BC807-40WT1G Applications

  • General purpose switching circuits.
  • Signal amplification in portable devices.
  • Load driver in low-power applications.
  • Used in consumer electronics designs.

BC807-40WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BC807-40WT1G?

The collector-emitter voltage (VCEO) is -45 V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is -500 mA.

What is the package type for this transistor?

The transistor is supplied in a surface-mount SC-70 (SOT-323) package, specifically SC-70-3 (SOT323).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC807-40WT1G RoHS compliant?

Yes, the device is RoHS3 compliant and Pb-Free.

What is the DC current gain (hFE) at 100 mA?

The DC current gain (hFE) is 250 minimum and 600 maximum at Ic = -100 mA, Vce = -1 V.

What is the transition frequency of this transistor?

The minimum transition frequency (fT) is 100 MHz at Ic = -10 mA, Vce = -5 V.

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