| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The BC807-40W is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is housed in a compact SOT-323 surface-mount package, making it suitable for space-constrained designs.
This transistor features a maximum collector-emitter voltage (V CEO) of 45V and a continuous collector current (I C) of up to 500mA. It offers a power dissipation of 0.2W at the specified ambient temperature. The DC current gain (h fe) is typically 400 under test conditions of 1V V CE and 100mA I C. The maximum junction temperature is rated at 150°C.
With a gain bandwidth product (f t) of 80MHz at 10mA and 5V, the BC807-40W is suitable for various signal processing tasks. Its SOT-323 package facilitates easy integration into printed circuit boards using surface-mount technology.
This component is classified as Industrial Grade and is active in its life cycle. It is not sensitive to ESD and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the BC807-40W is 45V DC.
The BC807-40W has a continuous collector current (I C) rating of 500mA.
The power dissipation (P tot) for the BC807-40W is 0.2W at the specified ambient temperature.
The typical DC current gain (h fe) of the BC807-40W is 400, measured at 1V V CE and 100mA I C.
The BC807-40W has a maximum junction temperature (T jmax) of 150°C.
The BC807-40W is available in a SOT-323 SMD package.
The BC807-40W is RoHS3 Compliant.
