BC807-40LT3G BC807-40LT3G is a PNP general-purpose transistor from On Semiconductor. It features a maximum collector-emitter voltage of -45V and continuous collector current of -500mA, housed in a surface-mount SOT-23-3 package.
Mfr Part #:

BC807-40LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC807-40LT3G is a PNP general-purpose transistor from On Semiconductor. It features a maximum collector-emitter voltage of -45V and continuous collector current of -500mA, housed in a surface-mount SOT-23-3 package.
✓ Total Stock: 1,001,020 pcs
$ Price Range: $0.04 - $0.17

BC807-40LT3G Available from 1 distributor

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✓ Non-Authorised
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1,001,020 pcs
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BC807-40LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC807-40LT3G Description

Short technical summary and product information.

The BC807-40LT3G is a PNP silicon general-purpose transistor manufactured by On Semiconductor, designed for general-purpose switching and amplification applications. It offers a maximum collector-emitter voltage (VCEO) of -45V and a maximum collector current of -500mA. With a DC current gain (hFE) of 250 minimum at 100mA and 40 minimum at 500mA, it provides suitable amplification for low to medium power designs. The device features a current-gain-bandwidth product (fT) of 100 MHz, making it suitable for audio frequency applications, and an output capacitance of typically 10 pF.

 

This transistor is housed in a compact SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59), minimizing board space for high-density designs. It is qualified for automotive applications with AEC-Q101 certification and PPAP capability. The part is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. Maximum power dissipation is 300 mW on an alumina substrate at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 417°C/W. The operating junction temperature range is -55°C to 150°C.

BC807-40LT3G Quick Information

Product Type: PNP Transistor
Series: BC807-40L
Canonical Name: BC807-40LT3G PNP General Purpose Transistor
Subcategory: Single PNP Transistor

BC807-40LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC807-40LT3G Estimated Pricing

Qty Low High
1+ $0.17 $0.17
10+ $0.10 $0.10
100+ $0.06 $0.06
500+ $0.05 $0.05
1,000+ $0.04 $0.04
10,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC807-40LT3G Features

  • PNP silicon general-purpose transistor.
  • Maximum collector-emitter voltage of -45V.
  • Continuous collector current rating of -500mA.
  • High DC current gain (hFE) of 250 at 100mA.
  • Surface-mount SOT-23-3 package.

BC807-40LT3G Applications

  • Suitable for general-purpose switching circuits.
  • Used in audio amplification stages.
  • Ideal for low-power driver circuits.
  • Applicable in automotive control modules.

BC807-40LT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC807-40LT3G?

The maximum collector-emitter voltage (VCEO) is -45V.

What package is the BC807-40LT3G available in?

The BC807-40LT3G is available in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC807-40LT3G RoHS compliant?

Yes, the BC807-40LT3G is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.

What is the DC current gain of the BC807-40LT3G?

The minimum DC current gain (hFE) is 250 at Ic=-100mA, Vce=-1V, and 40 at Ic=-500mA, Vce=-1V.

What is the maximum collector current?

The maximum continuous collector current is -500mA.

What is the power dissipation?

Maximum power dissipation is 300mW on an alumina substrate at 25°C ambient temperature.

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