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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,190 pcs
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6190 pcs | On Request | 1 | On Request | On Request | 0817+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC807-40E6327 is a PNP bipolar junction transistor (BJT) from Infineon Technologies. It features a collector-emitter voltage (Vceo) of 45 V, a continuous collector current (Ic) of 500 mA, and a power dissipation of 330 mW. The DC current gain (hFE) is minimum 250 at 100 mA collector current and 1 V Vce.
The transistor has a transition frequency (ft) of 200 MHz, making it suitable for switching and amplification applications up to medium frequencies. The collector-emitter saturation voltage (Vce sat) is typically 700 mV at 50 mA base current and 500 mA collector current.
The device is supplied in a surface-mount package: TO-236-3, SC-59, or SOT-23-3 (equivalent). The supplier device package is PG-SOT23-3-11. It is suitable for automated assembly and is RoHS3 compliant (unverified).
The collector-emitter voltage (Vceo) is 45 V.
TO-236-3, SC-59, or SOT-23-3 (supplier device package PG-SOT23-3-11).
The junction temperature (TJ) is rated up to 150°C.
RoHS3 compliant (unverified).
Minimum 250 at Ic=100mA, Vce=1V.
200 MHz.
Maximum 700 mV at Ib=50mA, Ic=500mA.