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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Collector Cutoff Current (Maximum @ VCB = -20 V) | |
| Collector Cutoff Current (Maximum @ VCB = -20 V, TJ = 150 °C) | |
| Collector Emitter Breakdown Voltage (Minimum @ IC = -10 mA) | |
| Collector Emitter Breakdown Voltage (Minimum @ VEB = 0, IC = -10 mA) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ IC = -500 mA, VCE = -1.0 V) | |
| DC Current Gain (Minimum/Maximum @ IC = -100 mA, VCE = -1.0 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature (TJ, Tstg) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC807-25LT3G is a PNP silicon bipolar junction transistor designed for general purpose amplification and switching applications. Manufactured by On Semiconductor, this device is part of the BC807-L family which includes various hFE grades.
It features a maximum collector-emitter voltage (VCEO) of -45V, a collector-base voltage (VCBO) of -50V, and an emitter-base voltage (VEBO) of -6V. The continuous collector current rating is -500mA. DC current gain (hFE) ranges from 160 to 400 at 100mA, 1V, and a minimum of 40 at 500mA, 1V. The transition frequency (fT) is typically 100MHz.
The device has a maximum power dissipation of 225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient. Thermal resistance junction-to-ambient is 436°C/W on FR-5 board and 417°C/W on alumina substrate. It is rated for junction and storage temperatures from -55°C to +150°C.
The BC807-25LT3G is offered in a surface-mount SOT-23-3 package (TO-236-3, SC-59). It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The device is also suitable for automotive applications with AEC-Q101 qualification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
| 10+ | $0.10 | $0.10 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.04 | $0.04 |
| 2,500+ | $0.03 | $0.03 |
| 5,000+ | $0.03 | $0.03 |
| 10,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC807-25LT3G is available in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59.
The operating junction and storage temperature range is from -55°C to 150°C.
Yes, the device is RoHS compliant (RoHS3), as per the datasheet.
The maximum continuous collector current (IC) is -500mA.
The DC current gain ranges from 160 to 400 at IC = -100mA, VCE = -1V, with a minimum of 40 at IC = -500mA, VCE = -1V.
The current-gain bandwidth product (fT) is typically 100 MHz.
Yes, the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.