BC807-25E6327 PNP bipolar transistor, 45V VCEO, 500mA IC, in SOT23-3 surface mount package. Suitable for general purpose switching and amplification.
Mfr Part #:

BC807-25E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
PNP bipolar transistor, 45V VCEO, 500mA IC, in SOT23-3 surface mount package. Suitable for general purpose switching and amplification.
✓ Total Stock: 40,000 pcs
$ Price Range: $0.04

BC807-25E6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,000 pcs
40000 pcs On Request 1 On Request On Request 1134+ On Request On Request

BC807-25E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC807-25E6327 Description

Short technical summary and product information.

The BC807-25E6327 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 500mA. The device offers a DC current gain (hFE) of 160 minimum at 100mA collector current and 1V VCE, and a transition frequency of 200MHz.

 

The transistor has a maximum power dissipation of 330mW and a collector-emitter saturation voltage of 700mV maximum at 500mA collector current. It is designed for surface mount assembly and is supplied in a TO-236-3 / SC-59 / SOT-23-3 package, with the specific supplier device package being PG-SOT23-3-11.

 

This transistor is suitable for general purpose switching and amplification applications in low to medium power circuits. The operating junction temperature range extends to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited), though these compliance claims are unverified.

BC807-25E6327 Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: Infineon BC807-25E6327 PNP Bipolar Transistor
Subcategory: Single PNP

BC807-25E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BC807-25E6327 Estimated Pricing

Qty Low High
7,059+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC807-25E6327 Features

  • PNP bipolar transistor with 45V breakdown voltage.
  • Continuous collector current rating of 500mA.
  • Maximum power dissipation of 330mW.
  • Surface mount SOT23-3 package.
  • Transition frequency of 200MHz.

BC807-25E6327 Applications

  • General purpose switching circuits.
  • Low power amplification stages.
  • Signal processing in portable devices.
  • Driver circuits for small loads.

BC807-25E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the BC807-25E6327?

The BC807-25E6327 is available in a TO-236-3, SC-59, SOT-23-3 surface mount package, specifically PG-SOT23-3-11.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Is the BC807-25E6327 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What type of transistor is the BC807-25E6327?

It is a PNP bipolar junction transistor.

What is the minimum DC current gain (hFE)?

The minimum hFE is 160 at 100mA collector current and 1V VCE.

What is the collector-emitter saturation voltage?

The maximum VCE(sat) is 700mV at 500mA collector current and 50mA base current.

What is the transition frequency?

The transition frequency (fT) is 200MHz.

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