| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 1134+ | On Request | On Request |
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The BC807-25E6327 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 500mA. The device offers a DC current gain (hFE) of 160 minimum at 100mA collector current and 1V VCE, and a transition frequency of 200MHz.
The transistor has a maximum power dissipation of 330mW and a collector-emitter saturation voltage of 700mV maximum at 500mA collector current. It is designed for surface mount assembly and is supplied in a TO-236-3 / SC-59 / SOT-23-3 package, with the specific supplier device package being PG-SOT23-3-11.
This transistor is suitable for general purpose switching and amplification applications in low to medium power circuits. The operating junction temperature range extends to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited), though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 7,059+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC807-25E6327 is available in a TO-236-3, SC-59, SOT-23-3 surface mount package, specifically PG-SOT23-3-11.
The maximum operating junction temperature is 150°C.
The part is listed as RoHS3 compliant, but this status is unverified.
It is a PNP bipolar junction transistor.
The minimum hFE is 160 at 100mA collector current and 1V VCE.
The maximum VCE(sat) is 700mV at 500mA collector current and 50mA base current.
The transition frequency (fT) is 200MHz.