BC807,215 PNP bipolar transistor, 45V collector-emitter voltage, 500mA collector current, 250mW power dissipation, in SOT-23-3 surface mount package.
Mfr Part #:

BC807,215

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
PNP bipolar transistor, 45V collector-emitter voltage, 500mA collector current, 250mW power dissipation, in SOT-23-3 surface mount package.
Total Stock: 3,996 pcs

BC807,215 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,998 pcs
1998 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,998 pcs
1998 pcs On Request 1 On Request On Request On Request On Request On Request

BC807,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC807,215 Description

Short technical summary and product information.

The BC807,215 is a PNP bipolar junction transistor designed for general purpose switching and amplification applications. It features a collector-emitter voltage rating of 45V and a continuous collector current of 500mA, making it suitable for low to medium power circuits.

 

With a power dissipation of 250mW and a transition frequency of 80MHz, this transistor offers reliable performance in signal processing and driver stages. The DC current gain (hFE) is a minimum of 100 at 100mA and 1V, ensuring consistent amplification characteristics.

 

The device is housed in a surface mount SOT-23-3 package (also known as TO-236AB), which is ideal for compact PCB designs. The operating junction temperature range extends to 150°C, allowing use in thermally demanding environments.

BC807,215 Quick Information

Product Type: Bipolar Transistor - Single
Series: BC807
Canonical Name: BC807,215 PNP Bipolar Transistor
Subcategory: PNP

BC807,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC807,215 Features

  • PNP bipolar junction transistor.
  • 45V collector-emitter breakdown voltage.
  • 500mA continuous collector current.
  • 250mW power dissipation.
  • 80MHz transition frequency.

BC807,215 Applications

  • Used in general purpose switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for portable electronics due to low power.
  • Surface mount for compact PCB designs.

BC807,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BC807,215?

The collector-emitter voltage (Vce) is 45V.

What is the package type of the BC807,215?

It is available in a SOT-23-3 surface mount package (TO-236AB).

What is the operating temperature range for the BC807,215?

The operating junction temperature range is up to 150°C (TJ).

Is the BC807,215 RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

What is the DC current gain (hFE) of the BC807,215?

The minimum DC current gain is 100 at 100mA collector current and 1V Vce.

What is the collector-emitter saturation voltage?

The maximum saturation voltage is 700mV at 50mA base current and 500mA collector current.

What is the transition frequency of the BC807,215?

The transition frequency (ft) is 80MHz.

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