| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,505 pcs
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2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation | |
| SVHC Present |
The BC807-16 is a PNP silicon planar medium power transistor from Taiwan Semiconductor. This component is designed for general-purpose amplification and switching applications.
Key electrical specifications include a maximum Collector-Base Voltage (V_CBO) of -50V and a maximum Collector-Emitter Voltage (V_CEO) of -45V. The continuous collector current (I_C) is rated at 500mA, with a peak pulse current (I_CM) of 1A. The device exhibits a typical static forward current transfer ratio (h_FE) ranging from 16 to 600 depending on the operating conditions.
With a power dissipation rating of 330mW at 25°C ambient temperature, the BC807-16 is suitable for medium power applications. The operating and storage temperature range is from -55°C to +150°C.
The transistor is supplied in a compact SOT-23 surface-mount package, making it ideal for space-constrained designs. Its complementary types include the BC817 and BC818 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage is -45V.
The maximum Continuous Collector Current is -500mA.
The maximum power dissipation is 330mW at an ambient temperature of 25°C.
The operating and storage temperature range is -55°C to +150°C.
The BC807-16 is provided in a SOT-23 package.
The mounting type for the BC807-16 is Surface Mount.
The typical Transition Frequency is 100MHz.