| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC807-16LT3G is a general-purpose PNP silicon bipolar junction transistor manufactured by onsemi. It is designed for low-power amplification and switching applications. Key maximum ratings include a collector-emitter voltage (VCEO) of -45 V, collector-base voltage (VCBO) of -50 V, emitter-base voltage (VEBO) of -6 V, and a continuous collector current of -500 mA.
Electrical characteristics at TA = 25°C include a DC current gain (hFE) of 100 to 250 at IC = -100 mA, VCE = -1 V, and a minimum hFE of 40 at IC = -500 mA, VCE = -1 V. Maximum collector-emitter saturation voltage is -0.7 V at IC = -500 mA, IB = -50 mA. The device has a transition frequency of at least 100 MHz and typical output capacitance of 10 pF.
The maximum power dissipation is 300 mW on an alumina substrate, with a junction-to-ambient thermal resistance of 417 °C/W. The device is rated for junction and storage temperatures from -55°C to +150°C.
The BC807-16LT3G is supplied in the surface-mount SOT-23-3 package (also designated TO-236-3 and SC-59). It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant per the datasheet. The part is suitable for general-purpose switching and amplifier circuits where small size and low power dissipation are important.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.18 | $0.18 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 2,500+ | $0.04 | $0.04 |
| 10,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -45 V. Collector-base voltage is -50 V, and emitter-base voltage is -6 V.
SOT-23-3 surface-mount package, also designated TO-236-3 and SC-59.
-55°C to +150°C for junction and storage.
Yes, the device is RoHS compliant, Pb-Free, and Halogen Free/BFR Free according to the datasheet.
At IC = -100 mA and VCE = -1 V, hFE ranges from 100 to 250; at IC = -500 mA, VCE = -1 V, minimum hFE is 40.
The maximum continuous collector current is -500 mA.
Maximum power dissipation is 300 mW on alumina substrate at TA = 25°C, with derating above 25°C.