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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,365 pcs
|
1365 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC639ZL1G is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A, making it suitable for general-purpose switching and amplification applications.
Key electrical characteristics include a DC current gain (hFE) of 40 minimum at 150mA and 2V, a maximum Vce saturation voltage of 500mV at 500mA collector current, and a transition frequency of 200MHz. The device can dissipate up to 625mW of power.
The transistor is offered in a TO-226-3, TO-92-3 Long Body package with formed leads, designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C.
80V.
1A.
TO-226-3, TO-92-3 Long Body (Formed Leads) with supplier device package TO-92 (TO-226).
-55°C to 150°C (junction temperature).
Yes, RoHS3 Compliant (unverified).
Minimum 40 at Ic=150mA, Vce=2V.
200MHz.