BC63916-D74Z NPN epitaxial silicon transistor from On Semiconductor. Rated for 80V collector-emitter voltage and 1A collector current, with a transition frequency of 100 MHz.
Mfr Part #:

BC63916-D74Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN epitaxial silicon transistor from On Semiconductor. Rated for 80V collector-emitter voltage and 1A collector current, with a transition frequency of 100 MHz.
Total Stock: 6,000 pcs
$ Price Range: $0.15 - $0.52

BC63916-D74Z Available from 1 distributor

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6,000 pcs
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BC63916-D74Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage (VBE(on)) Max @ VCE=2V, IC=500mA
Collector Current (DC) Max
Collector Cut-off Current (ICBO) Max @ VCB=30V, IE=0
Collector-Emitter Voltage (VCEO) Max
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 5 mA)
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 500 mA)
Emitter Cut-off Current (IEBO) Max @ VEB=5V
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation (PD) Max
Power Dissipation Derate Above TA=25°C
Supplier Device Package
Termination Style
Thermal Resistance Junction to Ambient (RθJA)
Transistor Type
Transition Frequency (fT) Typical @ VCE=5V, IC=10mA, f=50MHz
Vce Saturation (Max) @ Ib, Ic
Voltage

BC63916-D74Z Description

Short technical summary and product information.

The BC63916-D74Z is an NPN epitaxial silicon transistor designed for switching and amplifier applications. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. Power dissipation is 830 mW as per the datasheet, with a derating factor of 6.6 mW/°C above 25°C. The device offers a minimum DC current gain of 100 at 150 mA and a typical transition frequency of 100 MHz, making it suitable for general-purpose low-frequency circuits.

 

The transistor is housed in a through-hole TO-92-3 package (also known as TO-226-3) with formed leads, facilitating easy insertion into printed circuit boards. It operates over a junction temperature range of -55°C to 150°C. The device is Pb-Free and RoHS3 compliant per product data, though compliance status is unverified.

BC63916-D74Z Quick Information

Product Type: NPN Bipolar Junction Transistor
Canonical Name: BC63916 NPN Epitaxial Silicon Transistor
Subcategory: Single Transistor

BC63916-D74Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BC63916-D74Z Estimated Pricing

Qty Low High
1+ $0.52 $0.52
10+ $0.32 $0.32
100+ $0.20 $0.20
500+ $0.15 $0.15
2,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC63916-D74Z Features

  • NPN epitaxial silicon transistor for switching and amplification.
  • Rated for 80V collector-emitter voltage (VCEO).
  • Supports up to 1A continuous collector current.
  • High transition frequency of 100 MHz typical.
  • Through-hole TO-92-3 package with formed leads.

BC63916-D74Z Applications

  • Suitable for switching and linear amplifier applications.
  • Used in general-purpose signal processing circuits.
  • Ideal for low-power driver stages.
  • Can be used in audio preamplifier stages.

BC63916-D74Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

80V.

What package is the BC63916-D74Z available in?

TO-92-3 through-hole package (also TO-226-3).

What is the operating temperature range?

-55°C to 150°C.

Is the BC63916-D74Z RoHS compliant?

According to product data, it is RoHS3 compliant, but this is unverified.

What is the DC current gain (hFE) at 150mA?

Minimum 100 at VCE=2V, IC=150mA.

What is the collector-emitter saturation voltage?

Maximum 0.5V at IC=500mA, IB=50mA.

What is the transition frequency (fT)?

100 MHz typical at VCE=5V, IC=10mA.

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