BC63916-D27Z NPN epitaxial silicon transistor rated for 80V collector-emitter voltage and 1A collector current in a TO-92-3 through-hole package.
Mfr Part #:

BC63916-D27Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN epitaxial silicon transistor rated for 80V collector-emitter voltage and 1A collector current in a TO-92-3 through-hole package.
Total Stock: 11,069 pcs
$ Price Range: $0.18 - $0.61

BC63916-D27Z Available from 1 distributor

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Non-Authorised
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BC63916-D27Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage @ VCE=2V, IC=500mA
Collector Cut-Off Current @ VCB=30V, IE=0
Collector-Base Breakdown Voltage @ IC=100µA, IE=0
Collector-Emitter Voltage (VCES)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 5 mA)
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 500 mA)
Derate Above TA=25°C
Emitter Cut-Off Current @ VEB=5V, IC=0
Emitter-Base Breakdown Voltage @ IE=10µA, IC=0
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC63916-D27Z Description

Short technical summary and product information.

The BC63916-D27Z is an NPN epitaxial silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplifier applications. The device features a maximum collector-emitter voltage (VCEO) of 80V and a maximum collector current of 1A. Power dissipation is rated at 830mW with a derating factor of 6.6mW/°C above 25°C ambient temperature. The transistor offers a DC current gain (hFE) range of 100 to 250 at VCE=2V and IC=150mA, and a typical transition frequency of 100MHz. It is housed in a TO-226-3 (TO-92-3) through-hole package with formed leads, making it suitable for general-purpose through-hole PCB assembly. The device is Pb-Free and RoHS compliant.

BC63916-D27Z Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC63916
Canonical Name: BC63916-D27Z NPN Epitaxial Silicon Transistor
Subcategory: Single BJT

BC63916-D27Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BC63916-D27Z Estimated Pricing

Qty Low High
1+ $0.61 $0.61
10+ $0.38 $0.38
100+ $0.24 $0.24
500+ $0.18 $0.18
2,000+ $0.18 $0.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC63916-D27Z Features

  • NPN epitaxial silicon bipolar transistor.
  • 80V collector-emitter voltage rating.
  • 1A continuous collector current.
  • 830mW power dissipation capability.
  • Through-hole TO-92-3 package.

BC63916-D27Z Applications

  • Used in general-purpose switching circuits.
  • Suitable for amplifier stages.
  • Ideal for low-power driver applications.

BC63916-D27Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC63916-D27Z?

The maximum VCEO is 80V.

What is the maximum collector current rating?

The maximum collector current (IC) is 1A.

What package does the BC63916-D27Z come in?

It comes in a TO-226-3, TO-92-3 (TO-226AA) through-hole package with formed leads.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC63916-D27Z RoHS compliant?

The device is Pb-Free and RoHS3 compliant.

What is the DC current gain (hFE) at typical operating conditions?

At VCE=2V and IC=150mA, the hFE ranges from 100 to 250.

What is the power dissipation rating?

The maximum power dissipation is 830mW at 25°C ambient, derating at 6.6mW/°C above 25°C.

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