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159 pcs
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159 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BC639 is a medium power NPN silicon planar transistor designed for various electronic applications. It offers a robust 80V collector-emitter breakdown voltage and can handle up to 1A of continuous collector current.
Key electrical characteristics include a collector-emitter saturation voltage of 0.5V at 500mA and a static forward current transfer ratio (hFE) ranging from 25 to 160 depending on the collector current. The transition frequency is specified at 200 MHz under typical test conditions.
This transistor is supplied in a TO-92 package, suitable for through-hole mounting. It operates within a wide temperature range of -55°C to +150°C, with a power dissipation rating of 800mW at 25°C ambient temperature.
The BC639 is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the BC639 is 80V.
The BC639 can handle a maximum continuous collector current (IC) of 1A.
The power dissipation (Ptot) for the BC639 at an ambient temperature of 25°C is 800mW.
The operating and storage temperature range for the BC639 is -55°C to +150°C.
The BC639 transistor is supplied in a TO-92 package.