BC639 NPN silicon transistor with 80V collector-emitter voltage and 1A continuous collector current in a TO-92 package.
Mfr Part #:

BC639

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon transistor with 80V collector-emitter voltage and 1A continuous collector current in a TO-92 package.
Total Stock: 5,326 pcs
$ Price Range: $0.05

BC639 Available from 1 distributor

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Non-Authorised
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BC639 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage (Max)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Device Dissipation @ TA=25°C
Total Device Dissipation @ TC=25°C
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC639 Description

Short technical summary and product information.

The BC639 is an NPN silicon bipolar junction transistor designed for general purpose switching and amplification. It offers a collector-emitter voltage rating of 80V and a continuous collector current of 1A, making it suitable for medium power applications.

 

Electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage, and a gain bandwidth product of 200 MHz. The maximum collector-emitter saturation voltage is 500mV at 500mA collector current and 50mA base current.

 

The transistor is housed in a through-hole TO-92 package (TO-226-3, TO-92-3 Long Body) with a junction temperature range of -55°C to +150°C. Thermal resistance junction-to-ambient is 200°C/W and junction-to-case is 83.3°C/W.

 

Typical applications include driver stages, linear amplifiers, and medium power switching circuits. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

BC639 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BC639 NPN Bipolar Transistor
Subcategory: Single

BC639 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC639 Estimated Pricing

Qty Low High
10,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC639 Features

  • NPN silicon transistor with 80V collector-emitter voltage.
  • Continuous collector current rating of 1A.
  • Gain bandwidth product of 200 MHz.
  • Through-hole mounting in TO-92 package.
  • RoHS3 compliant (unverified).

BC639 Applications

  • General purpose switching and amplification.
  • Medium power driver stages.
  • Linear amplifier circuits.

BC639 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of BC639?

The collector-emitter voltage (VCEO) is 80V.

What is the maximum collector current?

The continuous collector current is 1A.

What package does the BC639 come in?

It is available in through-hole TO-226-3, TO-92-3 Long Body package (supplier device package TO-92 (TO-226)).

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.

Is the BC639 RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of BC639?

The minimum hFE is 40 at Ic=150mA, Vce=2V.

What is the maximum collector-emitter saturation voltage?

The maximum VCE(sat) is 500mV at Ib=50mA, Ic=500mA.

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