BC638TA BC638TA is a PNP epitaxial silicon transistor from ON Semiconductor. It features 60V collector-emitter voltage, 1A collector current, and is housed in a TO-92-3 package.
Mfr Part #:

BC638TA

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC638TA is a PNP epitaxial silicon transistor from ON Semiconductor. It features 60V collector-emitter voltage, 1A collector current, and is housed in a TO-92-3 package.
Total Stock: 18,989 pcs
$ Price Range: $0.08 - $0.36

BC638TA Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,249 pcs
3249 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,720 pcs
2720 pcs On Request 1 On Request On Request On Request On Request On Request

BC638TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction Temperature
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Peak Collector Current
Power
Shipping Method
Standard Package Quantity
Storage Temperature
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC638TA Description

Short technical summary and product information.

The BC638TA is a PNP epitaxial silicon transistor designed for switching and amplifier applications. It is the complement to the BC637 NPN transistor. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of -60V, continuous collector current of -1A, and peak collector current of -1.5A. The DC current gain (hFE) ranges from 40 to 160 at VCE = -2V and IC = -150mA. Collector-emitter saturation voltage is 500mV maximum at IC = -500mA and IB = -50mA. The current gain bandwidth product (fT) is 100 MHz typical. Power dissipation is 1W at 25°C ambient, with a junction-to-ambient thermal resistance of 125°C/W. The device is housed in a through-hole TO-92-3 (TO-226AA) package with formed leads. It is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free. Standard packaging is fan-fold with 2000 units per package.

BC638TA Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: BC638TA PNP Epitaxial Silicon Transistor
Subcategory: Single BJT

BC638TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BC638TA Estimated Pricing

Qty Low High
1+ $0.36 $0.36
10+ $0.22 $0.22
100+ $0.14 $0.14
500+ $0.10 $0.10
1,000+ $0.09 $0.09
2,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC638TA Features

  • PNP epitaxial silicon transistor.
  • 60V collector-emitter breakdown voltage.
  • 1A continuous collector current.
  • 100MHz current gain bandwidth product.
  • RoHS and Halogen Free compliant.

BC638TA Applications

  • Switching and amplifier applications.
  • Complement to BC637 NPN transistor.
  • General purpose low power circuits.
  • Audio amplification stages.
  • Signal processing circuits.

BC638TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The BC638TA has a collector-emitter breakdown voltage (VCEO) of -60V.

What package is the BC638TA available in?

The BC638TA is available in a TO-92-3 (TO-226AA) through-hole package.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

Is the BC638TA RoHS compliant?

Yes, the BC638TA is RoHS3 compliant and Pb-Free.

What is the DC current gain (hFE) of the BC638TA?

The DC current gain ranges from 40 to 160 at VCE=-2V, IC=-150mA.

What is the saturation voltage?

The collector-emitter saturation voltage is 500mV maximum at IC=-500mA, IB=-50mA.

What is the transition frequency?

The current gain bandwidth product (fT) is 100 MHz typical.

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