BC637 The BC637 is an NPN epitaxial silicon transistor from On Semiconductor. It features a 60V collector-emitter voltage and 1A continuous collector current in a TO-92 package.
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BC637

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC637 is an NPN epitaxial silicon transistor from On Semiconductor. It features a 60V collector-emitter voltage and 1A continuous collector current in a TO-92 package.
Total Stock: 301 pcs
$ Price Range: $0.08

BC637 Available from 1 distributor

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BC637 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Power Dissipation
Collector-Emitter Voltage (VCEO)
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC637 Description

Short technical summary and product information.

The BC637 is an NPN epitaxial silicon bipolar junction transistor designed for general-purpose switching and amplifier applications. It offers a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 1A, with a peak current capability of 1.5A. The DC current gain (hFE) ranges from 40 to 160 at a test condition of VCE=2V and IC=150mA, providing good amplification linearity.

 

This transistor features a current gain bandwidth product (ft) of 100MHz typical, making it suitable for low-frequency amplifier stages and moderate-speed switching circuits. Collector-emitter saturation voltage is 500mV maximum at IC=500mA and IB=50mA, ensuring low power dissipation in saturation.

 

The BC637 is housed in a through-hole TO-92 (TO-226) package, which allows easy insertion on printed circuit boards and prototyping. The operating junction temperature range is -55°C to 150°C, and the device is capable of dissipating up to 1W of power. It is a complement to the PNP types BC636, BC638, and BC640.

BC637 Quick Information

Product Type: Bipolar Transistor (BJT)
Series: BC637
Canonical Name: BC637 NPN Silicon Transistor
Subcategory: NPN Transistor

BC637 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC637 Estimated Pricing

Qty Low High
3,620+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC637 Features

  • NPN bipolar junction transistor design.
  • 60V maximum collector-emitter voltage.
  • 1A continuous collector current rating.
  • DC current gain of 40 to 160.
  • Through-hole TO-92 package for easy mounting.

BC637 Applications

  • Suitable for switching and amplifier circuits.
  • Complement to BC636/BC638/BC640 transistors.
  • Used in general-purpose low-frequency applications.

BC637 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of BC637?

The BC637 is an NPN bipolar junction transistor.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 60 V.

What is the maximum collector current?

The maximum continuous collector current is 1 A, with a peak current of 1.5 A.

What is the DC current gain (hFE) of BC637?

The DC current gain (hFE) is 40 minimum and 160 typical at VCE=2V, IC=150mA.

What package does the BC637 come in?

The BC637 is available in a through-hole TO-92 (TO-226) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC637 RoHS compliant?

The BC637 is listed as RoHS3 Compliant, but this status is unverified and should be confirmed from official documentation.

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