BC636 PNP epitaxial silicon transistor, 45V collector-emitter voltage, 1A collector current, 100MHz transition frequency, in TO-92-3 through-hole package. RoHS compliant.
Mfr Part #:

BC636

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP epitaxial silicon transistor, 45V collector-emitter voltage, 1A collector current, 100MHz transition frequency, in TO-92-3 through-hole package. RoHS compliant.
Total Stock: 216 pcs
$ Price Range: $0.12

BC636 Available from 1 distributor

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BC636 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter On Voltage (VBE(ON))
Collector Cut-off Current (ICBO)
Collector-Emitter Voltage (VCER)
Collector-Emitter Voltage (VCES)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 5 mA)
DC Current Gain (hFE) (Minimum @ Vce = 2 V, Ic = 500 mA)
Emitter Cut-off Current (IEBO)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Peak Collector Current (ICP)
Power
Storage Temperature Range
Supplier Device Package
Tape & Reel
Thermal Resistance Junction to Ambient (RθJA)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC636 Description

Short technical summary and product information.

The BC636 is a PNP epitaxial silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplifier applications, with a maximum collector-emitter voltage (VCEO) of 45V and a maximum collector current of 1A. The device features a DC current gain (hFE) of 40 to 250 at 150mA, and a transition frequency (fT) of 100MHz.

 

The transistor is housed in a TO-92-3 (TO-226-3) through-hole package with bent leads, suitable for manual or automated assembly. The junction-to-ambient thermal resistance is 125°C/W, allowing a maximum power dissipation of 1W at 25°C ambient temperature (derate 8mW/°C above 25°C).

 

The BC636 is the complement to the BC635 NPN transistor. It is compliant with RoHS, Pb-Free, and Halogen Free/BFR Free requirements as per the datasheet. The device is marked with 'BC636' and a date code on the package body.

BC636 Quick Information

Product Type: Bipolar (BJT) Transistor
Series: BC636
Canonical Name: BC636 PNP Epitaxial Silicon Transistor
Subcategory: PNP

BC636 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BC636 Estimated Pricing

Qty Low High
2,597+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC636 Features

  • PNP epitaxial silicon bipolar transistor.
  • Maximum collector-emitter voltage 45V.
  • Maximum collector current 1A.
  • Transition frequency 100MHz typical.
  • RoHS, Pb-Free, and Halogen Free compliant.

BC636 Applications

  • General-purpose switching circuits.
  • Linear amplifier stages.
  • Complementary pair with BC635 NPN.
  • Low-frequency signal processing.

BC636 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BC636?

The maximum collector-emitter voltage (VCEO) is 45V.

What is the package type of the BC636?

The BC636 is available in a TO-92-3 (TO-226-3) through-hole package with bent leads.

What is the operating temperature range?

The junction temperature maximum is 150°C, and storage temperature range is -65°C to 150°C.

Is the BC636 RoHS compliant?

Yes, the BC636 is RoHS compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.

What is the DC current gain of the BC636?

The DC current gain (hFE) is 40 to 250 at VCE=2V, IC=150mA.

What is the transition frequency of the BC636?

The typical transition frequency (fT) is 100MHz at VCE=5V, IC=10mA.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is 500mV at IB=50mA, IC=500mA.

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