BZD27C120P-GS08
Vishay
The Vishay Dale BZD27C120P-GS08 is a Zener diode in an SMF package. It features a 120V Zener voltage and 800mW power dissipation.
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1,900 pcs
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1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BC635 is a bipolar junction transistor (BJT) designed for various electronic applications. This component is housed in a TO-92 package, making it suitable for through-hole mounting.
Key electrical specifications include a maximum collector current of 1A and a collector emitter voltage rating of 45V. The device also has a maximum power dissipation of 2.75W and a typical power dissipation of 800mW. Its operating temperature range extends up to 150°C, allowing for use in demanding environments.
This transistor is identified by its part number BC635 and manufactured by NXP Semiconductors. While specific application details are not provided, its specifications suggest suitability for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current of the BC635 is 1A.
The collector-emitter voltage of the BC635 is 45V.
The maximum power dissipation of the BC635 is 2.75W.
The maximum operating temperature of the BC635 is 150°C.
The BC635 comes in a TO-92 package.