BC559BTA BC559BTA is a PNP epitaxial silicon transistor from On Semiconductor. It features 30V collector-emitter voltage, 100mA collector current, and 500mW power dissipation in a TO-92-3 through-hole package.
Mfr Part #:

BC559BTA

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC559BTA is a PNP epitaxial silicon transistor from On Semiconductor. It features 30V collector-emitter voltage, 100mA collector current, and 500mW power dissipation in a TO-92-3 through-hole package.
Total Stock: 47,147 pcs
$ Price Range: $0.06 - $0.28

BC559BTA Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
45,250 pcs
45250 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,897 pcs
1897 pcs On Request 1 On Request On Request 18+ On Request On Request

BC559BTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cut-Off Current (ICBO) @ 30V
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Noise Figure (NF) @ 1kHz, 2kΩ
Operating Temperature
Output Capacitance (Cob) @ 10V, 1MHz
Power
Storage Temperature Range
Supplier Device Package
Thermal Resistance Junction to Ambient (RθJA)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC559BTA Description

Short technical summary and product information.

The BC559BTA is a PNP epitaxial silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplifier applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V, a maximum collector current of 100mA, and a power dissipation of 500mW. The device offers a typical current gain bandwidth product (fT) of 150MHz and a minimum DC current gain (hFE) of 200 at 2mA collector current. It also features low noise performance with a typical noise figure of 1.2dB.

 

The transistor is housed in a TO-92-3 through-hole package, suitable for manual and automated assembly. It is rated for operation up to a junction temperature of 150°C and has a storage temperature range of -65°C to +150°C.

 

The BC559BTA is RoHS compliant, lead-free, and halogen-free, meeting current environmental standards.

BC559BTA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC559
Canonical Name: BC559BTA PNP Epitaxial Silicon Transistor
Subcategory: Single PNP

BC559BTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BC559BTA Estimated Pricing

Qty Low High
1+ $0.28 $0.28
10+ $0.17 $0.17
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
2,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC559BTA Features

  • PNP epitaxial silicon bipolar junction transistor.
  • 30V maximum collector-emitter voltage rating.
  • 100mA maximum continuous collector current.
  • 500mW power dissipation capability.
  • RoHS compliant, lead-free and halogen-free.

BC559BTA Applications

  • General purpose switching and amplifier circuits.
  • Low noise audio preamplifier stages.
  • Signal processing in consumer electronics.
  • Complementary pair with NPN BC546 series.

BC559BTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC559BTA?

The maximum collector-emitter voltage (VCEO) is 30V.

What is the package type of the BC559BTA?

The BC559BTA is available in a TO-92-3 through-hole package.

What is the operating junction temperature range?

The maximum junction temperature is 150°C, and the storage temperature range is -65°C to +150°C.

Is the BC559BTA RoHS compliant?

Yes, the BC559BTA is RoHS compliant, lead-free, and halogen-free as per the datasheet.

What is the typical current gain (hFE) of the BC559BTA?

The minimum DC current gain (hFE) is 200 at Ic=2mA and Vce=5V.

What is the maximum collector current of the BC559BTA?

The maximum continuous collector current (DC) is 100mA.

What is the power dissipation of the BC559BTA?

The maximum power dissipation is 500mW.

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