| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,154 pcs
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5154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The BC558C is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is designed for control and signal processing applications and comes in a standard TO-92 package.
Key electrical characteristics include a collector-emitter voltage (V CEO) of 30V DC and a continuous collector current (I C) of 100mA. The transistor offers a power dissipation of 0.5W at a specified temperature. Its DC current gain (h fe) is typically 400 under test conditions of 5V V CE and 100mA I C. The junction temperature can reach a maximum of 150°C.
This component is suitable for industrial-grade applications and is lead-free and halogen-free. The BC558C is specified as REACH unaffected and RoHS3 compliant, with a Moisture Sensitivity Level (MSL) of 1.
With its through-hole mounting type, the BC558C is designed for easy integration into electronic circuits. Its specifications make it a versatile component for signal amplification and switching tasks in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the BC558C is 30V DC.
The continuous collector current (I C) for the BC558C is 100mA.
The power dissipation (P tot) for the BC558C is 0.5W.
The typical DC current gain (h fe) of the BC558C is 400 at 5V V CE and 100mA I C.
The maximum junction temperature (T jmax) for the BC558C is 150°C.
The BC558C is available in a TO-92 package.
The BC558C is RoHS3 Compliant.