BC557BRL1G The BC557BRL1G from ON Semiconductor is a PNP bipolar junction transistor rated for -45V collector-emitter voltage and -100mA continuous collector current. It is housed in a through-hole TO-92 package.
Mfr Part #:

BC557BRL1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC557BRL1G from ON Semiconductor is a PNP bipolar junction transistor rated for -45V collector-emitter voltage and -100mA continuous collector current. It is housed in a through-hole TO-92 package.
Total Stock: 2,000 pcs
$ Price Range: $0.17

BC557BRL1G Available from 1 distributor

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BC557BRL1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB) – Peak
Collector Current (IC) (Maximum @ Peak)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Typical @ IC = -10 µA, VCE = -5 V)
DC Current Gain (hFE) (Typical @ IC = -100 mA, VCE = -5 V)
DC Current Gain Hfe (Minimum/Typical/Maximum @ IC=2 mA, VCE=5 V)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (PD) (Maximum @ TC=25 °C)
SVHC Present
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC557BRL1G Description

Short technical summary and product information.

The BC557BRL1G is a PNP silicon bipolar junction transistor manufactured by ON Semiconductor. It is designed for general purpose amplification and switching applications. The transistor features a collector-emitter voltage of -45 V (absolute) and a continuous collector current rating of -100 mA.

 

Electrical characteristics include a DC current gain (hFE) ranging from 180 minimum to 460 maximum at -2 mA collector current, with typical values around 290. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 650 mV at -100 mA. The transition frequency (ft) is typically 320 MHz, making it suitable for low to medium frequency circuits.

 

Thermal performance is rated with a power dissipation of 625 mW at 25°C ambient temperature, derating linearly. The device can operate over a junction temperature range of -55°C to 150°C. It is packaged in a through-hole TO-92 (TO-226) package, which is suitable for PCB mounting.

BC557BRL1G Quick Information

Product Type: PNP Bipolar Junction Transistor
Series: BC557
Canonical Name: ON Semiconductor BC557BRL1G PNP Bipolar Transistor
Subcategory: PNP Transistor

BC557BRL1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BC557BRL1G Estimated Pricing

Qty Low High
1,817+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC557BRL1G Features

  • PNP silicon bipolar junction transistor.
  • Rated for -45V collector-emitter voltage.
  • Continuous collector current up to -100mA.
  • Maximum power dissipation 625mW.
  • Through-hole TO-92 package.

BC557BRL1G Applications

  • Used in general purpose amplification circuits.
  • Suitable for low-power switching applications.
  • Ideal for signal processing and driver stages.

BC557BRL1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum VCEO of BC557BRL1G?

-45 V

What is the package type of BC557BRL1G?

Through-hole TO-92 (TO-226) package

What is the operating temperature range?

-55°C to 150°C (junction temperature)

What is the DC current gain (hFE) at -2 mA?

Minimum 180, typical 290, maximum 460

What is the collector-emitter saturation voltage?

Maximum 650 mV at IB = -5 mA, IC = -100 mA

What is the transition frequency?

Typically 320 MHz

What is the maximum power dissipation?

625 mW at 25°C ambient, 1.5 W at 25°C case

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