| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 2000 | On Request | On Request | On Request | On Request | On Request | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC557B,126 is a PNP general purpose bipolar junction transistor manufactured by NXP Semiconductors. It is designed for low-current switching and amplification applications, with a maximum collector current of 100mA and a maximum collector-emitter voltage of 45V. The transistor features a DC current gain (hFE) ranging from 220 to 475 at Vce=5V and Ic=2mA, and a transition frequency of at least 100MHz.
This device is housed in a TO-92-3 (TO-226AA) through-hole package with formed leads, making it suitable for breadboard prototyping and PCB insertion. The maximum power dissipation is 500mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 250K/W when mounted on an FR4 board. The operating junction temperature range is up to 150°C, and storage temperature ranges from -65°C to 150°C.
Typical applications include general purpose switching and amplification circuits, such as signal conditioning, driver stages, and low-power audio amplification. The BC557B is the PNP complement to the NPN BC547B transistor, allowing complementary push-pull configurations. With its low saturation voltages (300mV max at Ic=100mA) and low noise figure (2dB typical), it is well-suited for small-signal analog circuits.
The transistor is available in a through-hole TO-92 package, which is widely used in hobbyist and industrial designs. It is RoHS3 compliant and has an MSL rating of 1 (unlimited floor life), simplifying handling and storage. The BC557B,126 is a reliable choice for engineers seeking a standard PNP transistor for general purpose use.
The maximum collector-emitter voltage (VCEO) is 45V with open base.
The maximum DC collector current is 100mA, with a peak collector current of 200mA.
It comes in a TO-226-3, TO-92-3 (TO-226AA) through-hole package with formed leads.
The maximum power dissipation is 500mW at 25°C ambient temperature.
The DC current gain ranges from 220 to 475 at Vce=5V and Ic=2mA.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The part is marked as RoHS3 compliant, though this is unverified and should be confirmed with manufacturer documentation.